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IRL3803S/L
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
30
???
??? V V GS = 0V, I D = 250μA
? V (BR)DSS / ? T J Breakdown Voltage Temp. Coefficient
???
0.052
???
V/°C Reference to 25°C, I D = 1mA ?
0.009
V GS = 4.5V, I D = 59A ?
μA
100 V GS = 16V
-100
V GS = -16V
R DS(on)
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
???
???
1.0
55
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
14
230
29
35
0.006 V GS = 10V, I D = 71A ?
?
V V DS = V GS , I D = 250μA
??? S V DS = 25V, I D = 71A ?
25 V DS = 30V, V GS = 0V
250 V DS = 24V, V GS = 0V, T J = 150°C
nA
140 I D = 71A
41 nC V DS = 24V
78 V GS = 4.5V, See Fig. 6 and 13 ??
??? V DD = 15V
??? I D = 71A
??? R G = 1.3 ?
??? R D = 0.20 ?, See Fig. 10 ??
L S
Internal Source Inductance
???
7.5
???
nH
Between lead,
and center of die contact
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
???
???
???
5000 ??? V GS = 0V
1800 ??? pF V DS = 25V
880 ??? ? = 1.0MHz, See Fig. 5 ?
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
??? ??? 140 ?
??? ??? 470
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Diode Forward Voltage
Reverse Recovery Time
??? ??? 1.3 V T J = 25°C, I S = 71A, V GS = 0V ?
??? 120 180 ns T J = 25°C, I F = 71A
Q rr
Reverse Recovery Charge
??? 450 680 nC
di/dt = 100A/μs ??
t on
Notes:
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? V DD = 15V, starting T J = 25°C, L = 180μH
R G = 25 ? , I AS = 71A. (See Figure 12)
? I SD ≤ 71A, di/dt ≤ 130A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? Uses IRL3803 data and test conditions.
? Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2
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